Справочник MOSFET. APT1003RKFLLG

 

APT1003RKFLLG Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: APT1003RKFLLG
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 139 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 4 ns
   Cossⓘ - Выходная емкость: 135 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm
   Тип корпуса: TO-220
 
   - подбор ⓘ MOSFET транзистора по параметрам

 

APT1003RKFLLG Datasheet (PDF)

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APT1003RKFLLG

APT1003RKFLL1000V 4A 3.00R POWER MOS 7 FREDFETTO-220Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesGDSalong with exceptionall

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APT1003RKFLLG

APT1003RKLL1000V 4A 3.00R POWER MOS 7 MOSFETTO-220Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)Gand Qg. Power MOS 7 combines lower conduction and switching lossesDSalong with exceptionally

 5.2. Size:89K  apt
 apt1003rkllg.pdf pdf_icon

APT1003RKFLLG

APT1003RKLL1000V 4A 3.00R POWER MOS 7 MOSFETTO-220Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)Gand Qg. Power MOS 7 combines lower conduction and switching lossesDSalong with exceptionally

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 apt1003rbfllg apt1003rsfllg.pdf pdf_icon

APT1003RKFLLG

APT1003RBFLLAPT1003RSFLL1000V 4A 3.00R POWER MOS 7 FREDFETD3PAKTO-247Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... APT1002RBNR , APT10030L2VFRG , APT10035B2FLLG , APT10035B2LLG , APT10035LFLLG , APT10035LLLG , APT1003RBFLLG , APT1003RBLLG , IRFP460 , APT1003RKLLG , APT1003RSFLLG , APT1003RSLLG , APT10040B2VFRG , APT10040LVFRG , APT10040LVR , APT10045B2FLLG , APT10045B2LLG .

History: WSF45P06

 

 
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