APT10045B2FLLG. Аналоги и основные параметры
Наименование производителя: APT10045B2FLLG
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 565 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1000 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 23 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 715 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.46 Ohm
Тип корпуса: TO-247
Аналог (замена) для APT10045B2FLLG
- подборⓘ MOSFET транзистора по параметрам
APT10045B2FLLG даташит
apt10045b2fllg apt10045lfllg.pdf
APT10045B2FLL APT10045LFLL 1000V 23A 0.4 R B2FLL POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching l
apt10045b2fll.pdf
APT10045B2FLL APT10045LFLL 1000V 23A 0.450W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with excepti
apt10045b2llg apt10045lllg.pdf
APT10045B2LL APT10045LLL 1000V 23A 0.450 R B2LL POWER MOS 7 MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses al
apt10045b2ll.pdf
APT10045B2LL APT10045LLL 1000V 23A 0.450W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast
Другие IGBT... APT1003RBLLG, APT1003RKFLLG, APT1003RKLLG, APT1003RSFLLG, APT1003RSLLG, APT10040B2VFRG, APT10040LVFRG, APT10040LVR, IRFB4227, APT10045B2LLG, APT10045LFLLG, APT10045LLLG, APT1004RBNR, APT10050B2VFRG, APT10050LVFRG, APT10078BFLLG, APT10078BLLG
History: 2SK3774-01L
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