Справочник MOSFET. APT10M11B2VFRG

 

APT10M11B2VFRG Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: APT10M11B2VFRG
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 520 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 33 ns
   Cossⓘ - Выходная емкость: 3200 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
   Тип корпуса: TO-247
 

 Аналог (замена) для APT10M11B2VFRG

   - подбор ⓘ MOSFET транзистора по параметрам

 

APT10M11B2VFRG Datasheet (PDF)

 ..1. Size:64K  apt
 apt10m11b2vfrg apt10m11lvfrg.pdf pdf_icon

APT10M11B2VFRG

APT10M11B2VFRAPT10M11LVFR100V 100A 0.011WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical

 3.1. Size:63K  apt
 apt10m11b2vr.pdf pdf_icon

APT10M11B2VFRG

APT10M11B2VR100V 100A 0.011POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D L

 6.1. Size:70K  apt
 apt10m11jvr.pdf pdf_icon

APT10M11B2VFRG

APT10M11JVR100V 144A 0.011POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

 6.2. Size:65K  apt
 apt10m11lvr.pdf pdf_icon

APT10M11B2VFRG

APT10M11LVR100V 100A 0.011POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Low

ПОКАЗАТЬ ЕЩЁ

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History: STN4260 | HMS60N10D | PK5G6EA | FDS6680S | IRF7478PBF-1 | ZXM64N035L3

 

 
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