APT10M19SVFRG. Аналоги и основные параметры
Наименование производителя: APT10M19SVFRG
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 370 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 1900 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.019 Ohm
Тип корпуса: D3PAK
Аналог (замена) для APT10M19SVFRG
- подборⓘ MOSFET транзистора по параметрам
APT10M19SVFRG даташит
apt10m19bvfrg apt10m19svfr apt10m19svfrg.pdf
APT10M19BVFR APT10M19SVFR 100V 75A 0.019 BVFR POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. SV
apt10m19svr.pdf
APT10M19SVR 100V 75A 0.019 POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower
apt10m19bvr.pdf
APT10M19BVR 100V 75A 0.019 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower
apt10m19bvrg.pdf
APT10M19BVR 100V 75A 0.019 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower
Другие IGBT... APT10M07JVFR, APT10M09LVFRG, APT10M11B2VFRG, APT10M11JVFR, APT10M11LVFRG, APT10M19BVFRG, APT10M19BVRG, APT10M19SVFR, 13N50, APT11F80B, APT11F80S, APT11N80BC3G, APT11N80KC3G, APT1201R2BFLLG, APT1201R2SFLLG, APT1201R4BFLL, APT1201R4SFLL
History: APT41M80L
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