Справочник MOSFET. APT1204R7KFLLG

 

APT1204R7KFLLG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT1204R7KFLLG
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 135 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 31 nC
   trⓘ - Время нарастания: 2 ns
   Cossⓘ - Выходная емкость: 130 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 4.7 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для APT1204R7KFLLG

 

 

APT1204R7KFLLG Datasheet (PDF)

 ..1. Size:242K  apt
 apt1204r7kfllg.pdf

APT1204R7KFLLG APT1204R7KFLLG

APT1204R7KFLL1200V 3.5A 4.700R POWER MOS 7 FREDFETTO-220Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesGDSalong with exceptio

 5.1. Size:245K  apt
 apt1204r7bfllg apt1204r7sfllg.pdf

APT1204R7KFLLG APT1204R7KFLLG

APT1204R7BFLLAPT1204R7SFLL1200V 3.5A 4.700R POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong

 7.1. Size:126K  apt
 apt12045l2vfrg.pdf

APT1204R7KFLLG APT1204R7KFLLG

APT12045L2VFR1200V 28A 0.450POWER MOS VTO-264Power MOS V is a new generation of high voltage N-Channel enhancementMaxmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching Avalan

 7.2. Size:101K  apt
 apt12040l2fllg.pdf

APT1204R7KFLLG APT1204R7KFLLG

APT12040L2FLL1200V 30A 0.400R POWER MOS 7 FREDFETTO-264Power MOS 7 is a new generation of low loss, high voltage, N-Channel Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally

 7.3. Size:207K  apt
 apt12040jvr.pdf

APT1204R7KFLLG APT1204R7KFLLG

APT12040JVR1200V 26A 0.400WPOWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche T

 7.4. Size:125K  apt
 apt12045l2vfr.pdf

APT1204R7KFLLG APT1204R7KFLLG

APT12045L2VFR1200V 28A 0.450POWER MOS VTO-264Power MOS V is a new generation of high voltage N-Channel enhancementMaxmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching Avalan

 7.5. Size:77K  apt
 apt12045l2vr.pdf

APT1204R7KFLLG APT1204R7KFLLG

APT12045L2VR1200V 26A 0.450WPOWER MOS VTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Package 100% Avalanche TestedD

 7.6. Size:69K  apt
 apt12040jll.pdf

APT1204R7KFLLG APT1204R7KFLLG

APT12040JLL1000V 24A 0.400WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's

 7.7. Size:108K  apt
 apt12040jfll.pdf

APT1204R7KFLLG APT1204R7KFLLG

APT12040JFLL1200V 24A 0.400R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses "UL Recognized"ISOTOPalong with e

 7.8. Size:64K  apt
 apt12040l2ll.pdf

APT1204R7KFLLG APT1204R7KFLLG

APT12040L2LL1200V 30A 0.400WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent

 7.9. Size:121K  apt
 apt12040jvfr.pdf

APT1204R7KFLLG APT1204R7KFLLG

APT12040JVFR1200V 26A 0.400 POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V"UL Recognized"also achieves faster switching speeds through optimized gate layout.ISOTOP Faste

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