APT12057JFLL. Аналоги и основные параметры
Наименование производителя: APT12057JFLL
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 520 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1200 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 19 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 18 ns
Cossⓘ - Выходная емкость: 770 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.57 Ohm
Тип корпуса: SOT-227
Аналог (замена) для APT12057JFLL
- подборⓘ MOSFET транзистора по параметрам
APT12057JFLL даташит
apt12057jfll.pdf
APT12057JFLL 1200V 19A 0.570 R POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switchin
apt12057jll.pdf
APT12057JLL 1200V 19A 0.570W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's
apt12057b2llg apt12057lllg.pdf
APT12057B2LL APT12057LLL 1200V 22A 0.570 R B2LL POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses alo
apt12057b2fllg apt12057lfllg.pdf
APT12057B2FLL APT12057LFLL 1200V 22A 0.570 R B2FLL POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses
Другие IGBT... APT12040JFLL, APT12040L2FLLG, APT12045L2VFRG, APT1204R7BFLLG, APT1204R7KFLLG, APT1204R7SFLLG, APT12057B2FLLG, APT12057B2LLG, RFP50N06, APT12057LFLLG, APT12057LLLG, APT12060B2VFRG, APT12060LVFRG, APT12067B2FLLG, APT12067B2LLG, APT12067JFLL, APT12067LFLLG
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