Справочник MOSFET. APT12067B2FLLG

 

APT12067B2FLLG Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: APT12067B2FLLG
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 565 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 150 nC
   trⓘ - Время нарастания: 19 ns
   Cossⓘ - Выходная емкость: 660 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.67 Ohm
   Тип корпуса: TO-247
     - подбор MOSFET транзистора по параметрам

 

APT12067B2FLLG Datasheet (PDF)

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APT12067B2FLLG

APT12067B2FLLAPT12067LFLL1200V 18A 0.670RB2FLL POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses

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APT12067B2FLLG

APT12067B2LLAPT12067LLL1200V 18A 0.670R B2LL POWER MOS 7 MOSFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesLLL

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APT12067B2FLLG

APT12067B2LLAPT12067LLL1200V 18A 0.670WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast

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 apt12067jfll.pdf pdf_icon

APT12067B2FLLG

APT12067JFLL1200V 17A 0.670R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses"UL Recognized"ISOTOPalong with

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History: WM03DN06D | QM0008U | 10N60H | IXFN66N50Q2

 

 
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