APT12F60K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: APT12F60K
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 225 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 12 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 55 nC
Время нарастания (tr): 14 ns
Выходная емкость (Cd): 200 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.62 Ohm
Тип корпуса: TO-220
APT12F60K Datasheet (PDF)
apt12080jvfr.pdf
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APT12080JVFR1200V 15A 0.800POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V"UL Recognized"ISOTOPalso achieves faster switching speeds through optimized gate layout.D Faster Swit
apt1201r2sll.pdf
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APT1201R2BLLAPT1201R2SLL1200V 12A 1.200WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switc
apt12045l2vfrg.pdf
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APT12045L2VFR1200V 28A 0.450POWER MOS VTO-264Power MOS V is a new generation of high voltage N-Channel enhancementMaxmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching Avalan
apt12057b2llg apt12057lllg.pdf
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APT12057B2LLAPT12057LLL1200V 22A 0.570RB2LL POWER MOS 7 MOSFETPower MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalo
apt1201r5bvfrg apt1201r5svfrg.pdf
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APT1201R5BVFRAPT1201R5SVFR1200V 10A 1.500POWER MOS VTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switchi
apt12040l2fllg.pdf
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APT12040L2FLL1200V 30A 0.400R POWER MOS 7 FREDFETTO-264Power MOS 7 is a new generation of low loss, high voltage, N-Channel Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally
apt1204r7bfllg apt1204r7sfllg.pdf
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APT1204R7BFLLAPT1204R7SFLL1200V 3.5A 4.700R POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong
apt12067b2llg apt12067lllg.pdf
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APT12067B2LLAPT12067LLL1200V 18A 0.670R B2LL POWER MOS 7 MOSFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesLLL
apt12080b2vfr.pdf
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APT12080B2VFRAPT12080LVFR1200V 16A 0.800POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementT-MAXTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.
apt1201r5bvfr.pdf
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APT1201R5BVFRAPT1201R5SVFR1200V 10A 1.500POWER MOS VTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switchi
apt12031jll.pdf
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APT12031JLL1200V 30A 0.310WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's
apt12gt60brg.pdf
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TYPICAL PERFORMANCE CURVES APT12GT60BR(G) 600V APT12GT60BR APT12GT60BRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.Thunderbolt IGBTThe Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed.GCE Low Forward Voltage Drop Hig
apt12067b2ll.pdf
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APT12067B2LLAPT12067LLL1200V 18A 0.670WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast
apt1201r6bvr.pdf
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APT1201R6BVR1200V 8A 1.600POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower
apt12040jvr.pdf
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APT12040JVR1200V 26A 0.400WPOWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche T
apt12067jfll.pdf
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APT12067JFLL1200V 17A 0.670R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses"UL Recognized"ISOTOPalong with
apt12080jvr.pdf
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APT12080JVR1200V 15A 0.800WPOWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche T
apt12060b2vr.pdf
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APT12060B2VRAPT12060LVR1200V 20A 0.600WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificati
apt12067b2fllg apt12067lfllg.pdf
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APT12067B2FLLAPT12067LFLL1200V 18A 0.670RB2FLL POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses
apt12080lvr.pdf
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APT12080LVR1200V 16A 0.800POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe
apt12045l2vfr.pdf
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APT12045L2VFR1200V 28A 0.450POWER MOS VTO-264Power MOS V is a new generation of high voltage N-Channel enhancementMaxmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching Avalan
apt12057b2fllg apt12057lfllg.pdf
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APT12057B2FLLAPT12057LFLL1200V 22A 0.570RB2FLL POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses
apt1201r4bll.pdf
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APT1201R4BLLAPT1201R4SLL1200V 9A 1.400WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switch
apt12057jll.pdf
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APT12057JLL1200V 19A 0.570WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's
apt12060b2vfr.pdf
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APT12060B2VFRAPT12060LVFR1200V 20A 0.600POWER MOS VT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster S
apt12057b2ll.pdf
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APT12057B2LLAPT12057LLL1200V 22A 0.570WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast
apt12045l2vr.pdf
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APT12045L2VR1200V 26A 0.450WPOWER MOS VTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Package 100% Avalanche TestedD
apt12gt60br.pdf
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APT12GT60BR600V 25AThunderbolt IGBTTO-247The Thunderbolt IGBT is a new generation of high voltage power IGBTs.Using Non-Punch Through Technology the Thunderbolt IGBT offers superiorruggedness and ultrafast switching speed.G Low Forward Voltage Drop High Freq. Switching to 150KHzCCE Low Tail Current Ultra Low Leakage Current Avalanche Rated
apt12040jll.pdf
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APT12040JLL1000V 24A 0.400WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's
apt1201r6bvfr.pdf
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APT1201R6BVFRAPT1201R6SVFR1200V 8A 1.600BVFR POWER MOS V FREDFETTO-247D3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.
apt1201r6bvfrg apt1201r6svfrg.pdf
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APT1201R6BVFRAPT1201R6SVFR1200V 8A 1.600BVFR POWER MOS V FREDFETTO-247D3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.
apt12031jfll.pdf
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APT12031JFLL1200V 30A 0.33 R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally fast switchin
apt12060b2vfrg apt12060lvfrg.pdf
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APT12060B2VFRAPT12060LVFR1200V 20A 0.600POWER MOS VT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster S
apt1201r4bfll apt1201r4sfll.pdf
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APT1201R4BFLL(G)APT1201R4SFLL(G)1200V 9A 1.50 R POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesal
apt12040jfll.pdf
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APT12040JFLL1200V 24A 0.400R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses "UL Recognized"ISOTOPalong with e
apt12067jll.pdf
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APT12067JLL1200V 17A 0.670WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's
apt1204r7kfllg.pdf
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APT1204R7KFLL1200V 3.5A 4.700R POWER MOS 7 FREDFETTO-220Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesGDSalong with exceptio
apt1201r6.pdf
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APT1201R6BVR1200V 8A 1.600POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower
apt1201r2bfllg apt1201r2sfllg.pdf
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APT1201R2BFLL(G)APT1201R2SFLL(G)1200V 12A 1.25 R BFLL POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching loss
apt12040l2ll.pdf
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APT12040L2LL1200V 30A 0.400WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent
apt12080b2vfrg apt12080lvfrg.pdf
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APT12080B2VFRAPT12080LVFR1200V 16A 0.800POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementT-MAXTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.
apt1201r5bvr.pdf
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APT1201R5BVR1200V 10A 1.500POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe
apt1201r2bll.pdf
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APT1201R2BLLAPT1201R2SLL1200V 12A 1.200WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switc
apt12040jvfr.pdf
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APT12040JVFR1200V 26A 0.400 POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V"UL Recognized"also achieves faster switching speeds through optimized gate layout.ISOTOP Faste
apt12gt60kr.pdf
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APT12GT60KR600V 25AThunderbolt IGBTTO-220The Thunderbolt IGBT is a new generation of high voltage power IGBTs.Using Non-Punch Through Technology the Thunderbolt IGBT offers superiorruggedness and ultrafast switching speed.GC Low Forward Voltage Drop High Freq. Switching to 150KHz EC Low Tail Current Ultra Low Leakage Current Avalanche Rated
apt12057jfll.pdf
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APT12057JFLL1200V 19A 0.570R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally fast switchin
apt12m80b apt12m80s.pdf
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APT12M80B APT12M80S 800V, 13A, 0.80 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of
apt12gt60krg.pdf
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TYPICAL PERFORMANCE CURVES APT12GT60KR(G) 600V APT12GT60KRAPT12GT60KRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.Thunderbolt IGBTTO-220The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. Low Forward Voltage Drop High Freq
apt12m80b.pdf
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isc N-Channel MOSFET Transistor APT12M80BFEATURESDrain Current I =13A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .