APT14F100B Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT14F100B
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 500 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 14 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 29 ns
Cossⓘ - Выходная емкость: 335 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.98 Ohm
Тип корпуса: TO-247
Аналог (замена) для APT14F100B
APT14F100B Datasheet (PDF)
apt14f100b apt14f100s.pdf

APT14F100B APT14F100S 1000V, 14A, 0.98 Max, trr 240nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability.
apt14050jvfr.pdf

APT14050JVFR1400V 23A 0.500POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOPD Fas
apt14m120b apt14m120s.pdf

APT14M120B APT14M120S 1200V, 14A, 1.10 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance
apt14m100b apt14m100s.pdf

APT14M100B APT14M100S 1000V, 14A, 0.88 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance
Другие MOSFET... APT12067LLLG , APT12080B2VFRG , APT12080LVFRG , APT12F60K , APT12M80B , APT12M80S , APT13F120B , APT13F120S , MMIS60R580P , APT14F100S , APT14M100B , APT14M100S , APT14M120B , APT14M120S , APT15F50K , APT15F50KF , APT15F60B .
History: 2SK3812-ZP | IRFS840B | FQU30N06LTU | MPSA65M1K6 | HGN090AE6AL | BLM05N03-D | AP80SL400AI
History: 2SK3812-ZP | IRFS840B | FQU30N06LTU | MPSA65M1K6 | HGN090AE6AL | BLM05N03-D | AP80SL400AI



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