APT14M120B. Аналоги и основные параметры
Наименование производителя: APT14M120B
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 625 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1200 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 14 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 350 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.1 Ohm
Тип корпуса: TO-247
Аналог (замена) для APT14M120B
- подборⓘ MOSFET транзистора по параметрам
APT14M120B даташит
apt14m120b apt14m120s.pdf
APT14M120B APT14M120S 1200V, 14A, 1.10 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance
apt14m100b apt14m100s.pdf
APT14M100B APT14M100S 1000V, 14A, 0.88 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance
apt14050jvfr.pdf
APT14050JVFR 1400V 23A 0.500 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP D Fas
apt14f100b apt14f100s.pdf
APT14F100B APT14F100S 1000V, 14A, 0.98 Max, trr 240ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability.
Другие IGBT... APT12M80B, APT12M80S, APT13F120B, APT13F120S, APT14F100B, APT14F100S, APT14M100B, APT14M100S, IRLB3034, APT14M120S, APT15F50K, APT15F50KF, APT15F60B, APT15F60S, APT17F100B, APT17F100S, APT17F120J
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Список транзисторов
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