APT15F60B - описание и поиск аналогов

 ..1. Size:193K  microsemi
 apt15f60b apt15f60s.pdf 

APT15F60B APT15F60S 600V, 16A, 0.43 Max, Trr 190nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power D3PAK MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been opti- mized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo

 8.1. Size:216K  microsemi
 apt15f50k apt15f50kf.pdf 

APT15F50K_KF 500V, 15A, 0.39 Max, trr 190ns APT15F50KF N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low ga

 9.1. Size:45K  1
 apt15gf170br.pdf 

APT15GF170BR 1700V 25A Fast IGBT TO-247 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. G Low Forward Voltage Drop High Freq. Switching to 20KHz C C E Low Tail Current Ultra Low Leakage Current Avalanche Rated

 9.2. Size:192K  apt
 apt15gn120kg.pdf 

TYPICAL PERFORMANCE CURVES APT15GN120K(G) 1200V APT15GN120K APT15GN120KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum TO-220 conduction loss. Easy paralleling is a result of very tight parameter dist

 9.3. Size:160K  apt
 apt15gp90b.pdf 

TYPICAL PERFORMANCE CURVES APT15GP90B APT15GP90B 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz operation

 9.4. Size:68K  apt
 apt15gt60brd.pdf 

APT15GT60BRD 600V 30A Thunderbolt IGBT & FRED The Thunderbolt IGBT is a new generation of high voltage power IGBTs. TO-247 Using Non-Punch Through Technology the Thunderbolt IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and ultrafast switching speed. G Low Forward Voltage Drop High Freq. Switching to 150KHz

 9.5. Size:534K  apt
 apt150gn60jdq4.pdf 

TYPICAL PERFORMANCE CURVES APT150GN60JDQ4 600V APT150GN60JDQ4 Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built

 9.6. Size:211K  apt
 apt15gp60bsc.pdf 

TYPICAL PERFORMANCE CURVES APT15GP60BSC APT15GP60BSC 600V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz oper

 9.7. Size:1026K  apt
 apt15gp60bdq1g.pdf 

TYPICAL PERFORMANCE CURVES APT15GP60BDQ1 APT15GP60BDQ1 600V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz ope

 9.8. Size:24K  apt
 apt15gt60br.pdf 

APT15GT60BR 600V 31A Thunderbolt IGBT TO-247 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT offers superior ruggedness and ultrafast switching speed. G Low Forward Voltage Drop High Freq. Switching to 150KHz C C E Low Tail Current Ultra Low Leakage Current Avalanche Rated

 9.9. Size:86K  apt
 apt15gp60b.pdf 

 9.10. Size:126K  apt
 apt15gp60bdf1.pdf 

APT15GP60BDF1 600V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz operation @ 400V, 19A C Low Gate Charge

 9.11. Size:395K  apt
 apt15gt60brg.pdf 

TYPICAL PERFORMANCE CURVES APT15GT60BR(G) 600V APT15GT60BR APT15GT60BRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. G C E Low Forward Voltage Drop Hig

 9.12. Size:253K  apt
 apt15gp60bdq1.pdf 

TYPICAL PERFORMANCE CURVES APT15GP60BDQ1 APT15GP60BDQ1 600V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz ope

 9.13. Size:1011K  apt
 apt15gt120brdq1g.pdf 

1200V APT15GT120BRDQ1 APT15GT120BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. G C E Low Forward Voltage Drop High Freq. Switching to

 9.14. Size:462K  apt
 apt15gt60brdq1g.pdf 

TYPICAL PERFORMANCE CURVES APT15GT60BRDQ1(G) 600V APT15GT60BRDQ1 APT15GT60BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. G C E Low Forward Voltage Dro

 9.15. Size:418K  apt
 apt150gn120j.pdf 

TYPICAL PERFORMANCE CURVES APT150GN120J 1200V APT150GN120J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in

 9.16. Size:191K  apt
 apt15gp90bdf1.pdf 

TYPICAL PERFORMANCE CURVES APT15GP90BDF1 APT15GP90BDF1 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E C Low Conduction Loss 100 kHz

 9.17. Size:206K  apt
 apt15gp60kg.pdf 

 9.18. Size:160K  apt
 apt15gp90k.pdf 

TYPICAL PERFORMANCE CURVES APT15GP90K APT15GP90K 900V POWER MOS 7 IGBT TO-220 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz operatio

 9.19. Size:400K  apt
 apt15gp90kg.pdf 

TYPICAL PERFORMANCE CURVES APT15GP90K(G) 900V APT15GP90K APT15GP90KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT TO-220 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swit

 9.20. Size:331K  apt
 apt15gt60krg.pdf 

TYPICAL PERFORMANCE CURVES APT15GT60KR(G) 600V APT15GT60KR APT15GT60KRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT TO-220 The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. Low Forward Voltage Drop High

 9.21. Size:424K  apt
 apt15gp90bdq1g.pdf 

TYPICAL PERFORMANCE CURVES APT15GP90BDQ1(G) 900V APT15GP90BDQ1 APT15GP90BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swi

 9.22. Size:25K  apt
 apt15gt60kr.pdf 

APT15GT60KR 600V 31A Thunderbolt IGBT TO-220 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT offers superior ruggedness and ultrafast switching speed. G C Low Forward Voltage Drop High Freq. Switching to 150KHz E C Low Tail Current Ultra Low Leakage Current Avalanche Rated

 9.23. Size:780K  apt
 apt15gt120brg.pdf 

1200V APT15GT120BR APT15GT120BRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. G C E Low Forward Voltage Drop High Freq. Switching to 50KH

 9.24. Size:401K  apt
 apt15gp90bg.pdf 

TYPICAL PERFORMANCE CURVES APT15GP90B(G) 900V APT15GP90B APT15GP90BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode p

 9.25. Size:86K  apt
 apt15gp60k.pdf 

 9.26. Size:224K  apt
 apt15gn120bdq1g.pdf 

TYPICAL PERFORMANCE CURVES APT15GN120BDQ1(G) 1200V APT15GN120BDQ1 APT15GN120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter dis

 9.27. Size:483K  apt
 apt150gn60j.pdf 

TYPICAL PERFORMANCE CURVES APT150GN60J 600V APT150GN60J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in ga

 9.28. Size:265K  microsemi
 apt15gp60bg.pdf 

APT15GP60B APT15GP60S 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. Low Conduction Loss 100 kHz operation @ 400V, 19A C Low Gate Charge 20

 9.29. Size:202K  microsemi
 apt15gp60bdlg.pdf 

APT15GP60BDL(G) 600V, 15A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7 IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. Features Typical Applicat

 9.30. Size:118K  microsemi
 apt15gt120srg.pdf 

TYPICAL PERFORMANCE CURVES APT15GT120BR_SR(G) APT15GT120BR APT15GT120SR APT15GT120BR(G) APT15GT120SR(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT (B) D3PAK The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch (S) Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast C switchi

 9.31. Size:265K  microsemi
 apt15gp60s.pdf 

APT15GP60B APT15GP60S 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. Low Conduction Loss 100 kHz operation @ 400V, 19A C Low Gate Charge 20

 9.32. Size:168K  microsemi
 apt150gn60b2g.pdf 

TYPICAL PERFORMANCE CURVES APT150GN60B2(G) 600V APT150GN60B2(G) Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coeffi cient. A built-

 9.33. Size:235K  microsemi
 apt150gn60ldq4g.pdf 

600V APT150GN60LDQ4(G) Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coeffi cient. A built-in gate resistor ensures extremely relia

 9.34. Size:195K  microsemi
 apt150gn120jdq4.pdf 

APT150GN120JDQ4 1200V, 150A, VCE(ON) = 3.2V Typical Utilizing the latest Field Stop and Trench Gate technologies, these IGBT s have ultra low V and are ideal for low frequency applications that require absolute minimum CE(ON) conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V temperature coefficient. A built-in gate resistor

 9.35. Size:202K  microsemi
 apt150gt120jr.pdf 

APT150GT120JR 1200V, 150A, VCE(ON) = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non- Punch-Through Technology, the Thunderbolt IGBT offers superior ruggedness and ultrafast switching speed. Features RBSOA and SCSOA Rated Low Forward Voltage Drop "UL Recognized" High Frequency Switching to 50KHz L

 9.36. Size:160K  microsemi
 apt15gn120sdq1g.pdf 

TYPICAL PERFORMANCE CURVES APT15GN120BD_SDQ1(G) APT15GN120BDQ1 APT15GN120SDQ1 APT15GN120BDQ1(G) APT15GN120SDQ1(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra (B) low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling