Справочник MOSFET. APT17F120J

 

APT17F120J Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: APT17F120J
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 545 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 31 ns
   Cossⓘ - Выходная емкость: 715 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.58 Ohm
   Тип корпуса: SOT-227
 

 Аналог (замена) для APT17F120J

   - подбор ⓘ MOSFET транзистора по параметрам

 

APT17F120J Datasheet (PDF)

 ..1. Size:213K  microsemi
apt17f120j.pdfpdf_icon

APT17F120J

APT17F120J 1200V, 18A, 0.58 Max, trr 330nsN-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hig

 7.1. Size:215K  microsemi
apt17f100b apt17f100s.pdfpdf_icon

APT17F120J

APT17F100B APT17F100S 1000V, 17A, 0.78 Max, trr 245nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability.

 8.1. Size:212K  microsemi
apt17f80b apt17f80s.pdfpdf_icon

APT17F120J

APT17F80B APT17F80S 800V, 18A, 0.58 Max, trr 250nsN-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power D3PAKMOSFET. This 'FREDFET' version has a drain-source (body) diode that has been opti-mized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo

 8.2. Size:375K  inchange semiconductor
apt17f80b.pdfpdf_icon

APT17F120J

isc N-Channel MOSFET Transistor APT17F80BFEATURESDrain Current I = 18A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.58(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Другие MOSFET... APT14M120B , APT14M120S , APT15F50K , APT15F50KF , APT15F60B , APT15F60S , APT17F100B , APT17F100S , HY1906P , APT17F80B , APT17F80S , APT17M120JCU2 , APT17M120JCU3 , APT17N80BC3G , APT17N80SC3G , APT18F60B , APT18F60S .

History: PT4606 | NP82N04PUG | IPD90N06S4-05 | AUIRF8736M2TR | MTP4835Q8 | AONR34332C

 

 
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