APT18M100B. Аналоги и основные параметры
Наименование производителя: APT18M100B
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 625 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1000 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 405 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.7 Ohm
Тип корпуса: TO-247
Аналог (замена) для APT18M100B
- подборⓘ MOSFET транзистора по параметрам
APT18M100B даташит
apt18m100b apt18m100s.pdf
APT18M100B APT18M100S 1000V, 18A, 0.70 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance
apt18m80b apt18m80s.pdf
APT18M80B APT18M80S 800V, 19A, 0.53 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of
apt18m80b.pdf
isc N-Channel MOSFET Transistor APT18M80B FEATURES Drain Current I =19A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R =0.53 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos
apt18f60b apt18f60s.pdf
APT18F60B APT18F60S 600V, 19A, 0.37 Max, trr 200ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo
Другие IGBT... APT17F80B, APT17F80S, APT17M120JCU2, APT17M120JCU3, APT17N80BC3G, APT17N80SC3G, APT18F60B, APT18F60S, IRF840, APT18M100S, APT18M80B, APT18M80S, APT19F100J, APT19M120J, APT20F50B, APT20F50S, APT20M11JFLL
History: RU20T7G
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Список транзисторов
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