APT18M80S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: APT18M80S
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 500 W
Предельно допустимое напряжение сток-исток |Uds|: 800 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 19 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 120 nC
Время нарастания (tr): 31 ns
Выходная емкость (Cd): 375 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.53 Ohm
Тип корпуса: D3PAK
APT18M80S Datasheet (PDF)
apt18m80b apt18m80s.pdf
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APT18M80B APT18M80S 800V, 19A, 0.53 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of
apt18m80b.pdf
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isc N-Channel MOSFET Transistor APT18M80BFEATURESDrain Current I =19A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.53(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
apt18m100b apt18m100s.pdf
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APT18M100B APT18M100S 1000V, 18A, 0.70 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance
apt18f60b apt18f60s.pdf
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APT18F60B APT18F60S 600V, 19A, 0.37 Max, trr 200nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo
apt18f60b.pdf
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isc N-Channel MOSFET Transistor APT18F60BFEATURESDrain Current I = 19A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.37(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
![APT18M80S](https://alltransistors.com/images/us.png)
![APT18M80S](https://alltransistors.com/images/es.png)
![APT18M80S](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C