APT20M16B2FLLG. Аналоги и основные параметры

Наименование производителя: APT20M16B2FLLG

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 694 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 31 ns

Cossⓘ - Выходная емкость: 2330 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm

Тип корпуса: TO-247

Аналог (замена) для APT20M16B2FLLG

- подборⓘ MOSFET транзистора по параметрам

 

APT20M16B2FLLG даташит

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APT20M16B2FLLG

APT20M16B2FLL APT20M16LFLL 200V 100A 0.016 R B2FLL POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses

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 apt20m16b2fll.pdf pdf_icon

APT20M16B2FLLG

APT20M16B2FLL APT20M16LFLL 200V 100A 0.016W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with excepti

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 apt20m16b2fll.pdf pdf_icon

APT20M16B2FLLG

isc N-Channel MOSFET Transistor APT20M16B2FLL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R =0.016 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

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 apt20m16b2ll.pdf pdf_icon

APT20M16B2FLLG

APT20M16B2LL APT20M16LLL 200V 100A 0.016W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast

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