Справочник MOSFET. APT20M16LFLLG

 

APT20M16LFLLG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT20M16LFLLG
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 694 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 140 nC
   trⓘ - Время нарастания: 31 ns
   Cossⓘ - Выходная емкость: 2330 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
   Тип корпуса: TO-264

 Аналог (замена) для APT20M16LFLLG

 

 

APT20M16LFLLG Datasheet (PDF)

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 apt20m16b2fllg apt20m16lfllg.pdf

APT20M16LFLLG APT20M16LFLLG

APT20M16B2FLLAPT20M16LFLL200V 100A 0.016RB2FLL POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses

 2.1. Size:255K  inchange semiconductor
 apt20m16lfll.pdf

APT20M16LFLLG APT20M16LFLLG

isc N-Channel MOSFET Transistor APT20M16LFLLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.016(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 5.1. Size:171K  apt
 apt20m16b2llg apt20m16lllg.pdf

APT20M16LFLLG APT20M16LFLLG

APT20M16B2LLAPT20M16LLL200V 100A 0.016RB2LL POWER MOS 7 MOSFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesLL

 6.1. Size:70K  apt
 apt20m16b2ll.pdf

APT20M16LFLLG APT20M16LFLLG

APT20M16B2LLAPT20M16LLL200V 100A 0.016WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast

 6.2. Size:71K  apt
 apt20m16b2fll.pdf

APT20M16LFLLG APT20M16LFLLG

APT20M16B2FLLAPT20M16LFLL200V 100A 0.016WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with excepti

 6.3. Size:376K  inchange semiconductor
 apt20m16b2ll.pdf

APT20M16LFLLG APT20M16LFLLG

isc N-Channel MOSFET Transistor APT20M16B2LLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.016(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 6.4. Size:376K  inchange semiconductor
 apt20m16b2fll.pdf

APT20M16LFLLG APT20M16LFLLG

isc N-Channel MOSFET Transistor APT20M16B2FLLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.016(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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