APT20M34BLLG Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT20M34BLLG
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 403 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 74 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 27 ns
Cossⓘ - Выходная емкость: 1170 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.034 Ohm
Тип корпуса: TO-247
- подбор MOSFET транзистора по параметрам
APT20M34BLLG Datasheet (PDF)
apt20m34bllg apt20m34sllg.pdf

APT20M34BLLAPT20M34SLL200V 74A 0.034R POWER MOS 7 MOSFETBLLD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSLLalo
apt20m34bll.pdf

APT20M34BLLAPT20M34SLL200V 74A 0.034WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switchin
apt20m34bll.pdf

isc N-Channel MOSFET Transistor APT20M34BLLFEATURESDrain Current I =74A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.034(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
apt20m34bfllg apt20m34sfllg.pdf

APT20M34BFLLAPT20M34SFLL200V 74A 0.034BFLLR POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSFLL
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: RJK0371DSP | NCEP026N10F | IRFY230C | SI7913DN | JCS5N50CT | MC11N005 | NVMFS5C628N
History: RJK0371DSP | NCEP026N10F | IRFY230C | SI7913DN | JCS5N50CT | MC11N005 | NVMFS5C628N



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