APT22F120B2. Аналоги и основные параметры

Наименование производителя: APT22F120B2

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1040 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1200 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 23 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 27 ns

Cossⓘ - Выходная емкость: 615 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.7 Ohm

Тип корпуса: TO-247

Аналог (замена) для APT22F120B2

- подборⓘ MOSFET транзистора по параметрам

 

APT22F120B2 даташит

 ..1. Size:211K  microsemi
 apt22f120b2 apt22f120l.pdf pdf_icon

APT22F120B2

APT22F120B2 APT22F120L 1200V, 23A, 0.70 Max, trr 270ns N-Channel FREDFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt

 7.1. Size:199K  microsemi
 apt22f100j.pdf pdf_icon

APT22F120B2

APT22F100J 1000V, 23A, 0.38 Max, trr 300ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hi

 8.1. Size:221K  microsemi
 apt22f80b apt22f80s.pdf pdf_icon

APT22F120B2

APT22F80B APT22F80S 800V, 23A, 0.43 Max, trr 260ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo

 8.2. Size:375K  inchange semiconductor
 apt22f80b.pdf pdf_icon

APT22F120B2

isc N-Channel MOSFET Transistor APT22F80B FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 0.43 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... APT20M34SFLLG, APT20M34SLLG, APT20M36BFLLG, APT20M36SFLLG, APT20M38SVFRG, APT20M40HVR, APT21M100J, APT22F100J, K3569, APT22F120L, APT22F80B, APT22F80S, APT22M100JCU2, APT22M100JCU3, APT23F60B, APT23F60S, APT24F50B