Справочник MOSFET. APT22F120B2

 

APT22F120B2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT22F120B2
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1040 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 23 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 260 nC
   trⓘ - Время нарастания: 27 ns
   Cossⓘ - Выходная емкость: 615 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.7 Ohm
   Тип корпуса: TO-247

 Аналог (замена) для APT22F120B2

 

 

APT22F120B2 Datasheet (PDF)

 ..1. Size:211K  microsemi
 apt22f120b2 apt22f120l.pdf

APT22F120B2 APT22F120B2

APT22F120B2 APT22F120L 1200V, 23A, 0.70 Max, trr 270nsN-Channel FREDFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt

 7.1. Size:199K  microsemi
 apt22f100j.pdf

APT22F120B2 APT22F120B2

APT22F100J 1000V, 23A, 0.38 Max, trr 300nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hi

 8.1. Size:221K  microsemi
 apt22f80b apt22f80s.pdf

APT22F120B2 APT22F120B2

APT22F80B APT22F80S 800V, 23A, 0.43 Max, trr 260nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo

 8.2. Size:375K  inchange semiconductor
 apt22f80b.pdf

APT22F120B2 APT22F120B2

isc N-Channel MOSFET Transistor APT22F80BFEATURESDrain Current I = 23A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.43(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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