APT22F120L. Аналоги и основные параметры

Наименование производителя: APT22F120L

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1040 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1200 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 23 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 27 ns

Cossⓘ - Выходная емкость: 615 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.7 Ohm

Тип корпуса: TO-264

Аналог (замена) для APT22F120L

- подборⓘ MOSFET транзистора по параметрам

 

APT22F120L даташит

 ..1. Size:211K  microsemi
 apt22f120b2 apt22f120l.pdf pdf_icon

APT22F120L

APT22F120B2 APT22F120L 1200V, 23A, 0.70 Max, trr 270ns N-Channel FREDFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt

 7.1. Size:199K  microsemi
 apt22f100j.pdf pdf_icon

APT22F120L

APT22F100J 1000V, 23A, 0.38 Max, trr 300ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hi

 8.1. Size:221K  microsemi
 apt22f80b apt22f80s.pdf pdf_icon

APT22F120L

APT22F80B APT22F80S 800V, 23A, 0.43 Max, trr 260ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo

 8.2. Size:375K  inchange semiconductor
 apt22f80b.pdf pdf_icon

APT22F120L

isc N-Channel MOSFET Transistor APT22F80B FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 0.43 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

ПОКАЗАТЬ ЕЩЁ

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