APT24F50B Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT24F50B
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 335 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 24 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 19 ns
Cossⓘ - Выходная емкость: 390 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.24 Ohm
Тип корпуса: TO-247
Аналог (замена) для APT24F50B
APT24F50B Datasheet (PDF)
apt24f50b apt24f50s.pdf

APT24F50B APT24F50S 500V, 24A, 0.24 Max, trr 210nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo
apt24f50b.pdf

isc N-Channel MOSFET Transistor APT24F50BFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.14(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
apt24m80b apt24m80s.pdf

APT24M80B APT24M80S 800V, 25A, 0.39 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of
apt24m120b2 apt24m120l.pdf

APT24M120B2 APT24M120L 1200V, 24A, 0.63 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and
Другие MOSFET... APT22F120B2 , APT22F120L , APT22F80B , APT22F80S , APT22M100JCU2 , APT22M100JCU3 , APT23F60B , APT23F60S , 4N60 , APT24F50S , APT24M120B2 , APT24M120L , APT24M80B , APT24M80S , APT25M100J , APT26F120B2 , APT26F120L .
History: BL3N90-P | STF140N8F7 | NCEA6080K | IRF7807VD2PBF | AOTL125A60 | TN2404K | STW48N60DM2
History: BL3N90-P | STF140N8F7 | NCEA6080K | IRF7807VD2PBF | AOTL125A60 | TN2404K | STW48N60DM2



Список транзисторов
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