APT24M120B2. Аналоги и основные параметры
Наименование производителя: APT24M120B2
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 1040 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1200 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 24 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 27 ns
Cossⓘ - Выходная емкость: 615 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.63 Ohm
Тип корпуса: TO-247
Аналог (замена) для APT24M120B2
- подборⓘ MOSFET транзистора по параметрам
APT24M120B2 даташит
apt24m120b2 apt24m120l.pdf
APT24M120B2 APT24M120L 1200V, 24A, 0.63 Max N-Channel MOSFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and
apt24m80b apt24m80s.pdf
APT24M80B APT24M80S 800V, 25A, 0.39 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of
apt24m80b.pdf
isc N-Channel MOSFET Transistor APT24M80B FEATURES Drain Current I =25A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R =0.39 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos
apt24f50b apt24f50s.pdf
APT24F50B APT24F50S 500V, 24A, 0.24 Max, trr 210ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo
Другие IGBT... APT22F80B, APT22F80S, APT22M100JCU2, APT22M100JCU3, APT23F60B, APT23F60S, APT24F50B, APT24F50S, IRF1010E, APT24M120L, APT24M80B, APT24M80S, APT25M100J, APT26F120B2, APT26F120L, APT26M100JCU2, APT26M100JCU3
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Список транзисторов
Обновления
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