APT25M100J - описание и поиск аналогов

 ..1. Size:206K  microsemi
 apt25m100j.pdf 

APT25M100J 1000V, 25A, 0.33 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon

 9.1. Size:93K  apt
 apt25gp120bg.pdf 

APT25GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through TO-247 technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch- mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT provides a lower cost alt

 9.2. Size:190K  apt
 apt25gp120bdf1.pdf 

TYPICAL PERFORMANCE CURVES APT25GP120BDF1 APT25GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology TO-247 and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the

 9.3. Size:220K  apt
 apt25gn120b2dq2g.pdf 

TYPICAL PERFORMANCE CURVES APT25GN120B2DQ2(G) 1200V APT25GN120B2DQ2 APT25GN120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s (B2) have a very short, low amplitude tail current and low Eoff. The Trench Gate design T-Max results in superior VCE(on) performance. Easy paralleling resu

 9.4. Size:205K  apt
 apt25gp90bdf1.pdf 

TYPICAL PERFORMANCE CURVES APT25GP90BDF1 APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E C Low Conduction Loss 100 kHz

 9.5. Size:188K  apt
 apt25gp90bg.pdf 

TYPICAL PERFORMANCE CURVES APT25GP90B APT25GP90B 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C C E Low Conduction Loss 100 kHz operat

 9.6. Size:144K  apt
 apt25gt120brg.pdf 

TYPICAL PERFORMANCE CURVES APT25GT120BR(G) 1200V APT25GT120BR APT25GT120BRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. G C E Low Forward Voltage Drop

 9.7. Size:441K  apt
 apt25gp90bdq1g.pdf 

TYPICAL PERFORMANCE CURVES APT25GP90BDQ1(G) 900V APT25GP90BDQ1 APT25GP90BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swi

 9.8. Size:195K  apt
 apt25gn120bg.pdf 

TYPICAL PERFORMANCE CURVES APT25GN120B_S(G) 1200V APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra (B) low VCE(ON) and are ideal for low frequency applications that require absolute minimum D3PAK conduction loss. Easy paralleling is a re

 9.9. Size:195K  apt
 apt25gn120sg.pdf 

TYPICAL PERFORMANCE CURVES APT25GN120B_S(G) 1200V APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra (B) low VCE(ON) and are ideal for low frequency applications that require absolute minimum D3PAK conduction loss. Easy paralleling is a re

 9.10. Size:175K  apt
 apt25gp90b.pdf 

TYPICAL PERFORMANCE CURVES APT25GP90B APT25GP90B 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C C E Low Conduction Loss 100 kHz operat

 9.11. Size:184K  apt
 apt25gn120b.pdf 

TYPICAL PERFORMANCE CURVES APT25GN120B APT25GN120B 1200V Utilizing the latest Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance en

 9.12. Size:92K  apt
 apt25gp120b.pdf 

APT25GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through TO-247 technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch- mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT provides a lower cost alt