Справочник MOSFET. APT26M100JCU3

 

APT26M100JCU3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT26M100JCU3
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 543 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 26 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 305 nC
   trⓘ - Время нарастания: 40 ns
   Cossⓘ - Выходная емкость: 825 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.396 Ohm
   Тип корпуса: SOT-227

 Аналог (замена) для APT26M100JCU3

 

 

APT26M100JCU3 Datasheet (PDF)

 ..1. Size:107K  microsemi
 apt26m100jcu3.pdf

APT26M100JCU3 APT26M100JCU3

APT26M100JCU3VDSS = 1000V ISOTOP Buck chopper RDSon = 330m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 26A @ Tc = 25C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G- Low RDSon S- Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schott

 2.1. Size:106K  microsemi
 apt26m100jcu2.pdf

APT26M100JCU3 APT26M100JCU3

APT26M100JCU2VDSS = 1000V ISOTOP Boost chopper RDSon = 330m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 26A @ Tc = 25C Power module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low RDSon - Low input and Miller capacitance - Low gat

 9.1. Size:167K  apt
 apt26gu30k.pdf

APT26M100JCU3 APT26M100JCU3

TYPICAL PERFORMANCE CURVESAPT26GU30K_SAAPT26GU30KAPT26GU30SA300VTO-220 POWER MOS 7 IGBTD2PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,CGChigh voltage switching applications and has been optimized for high frequencyE G Eswitchmode power supplies. Low Condu

 9.2. Size:161K  apt
 apt26gu30b.pdf

APT26M100JCU3 APT26M100JCU3

TYPICAL PERFORMANCE CURVESAPT26GU30BAPT26GU30B300V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss SSOA ratedC

 9.3. Size:117K  microsemi
 apt26f120b2 apt26f120l.pdf

APT26M100JCU3 APT26M100JCU3

APT26F120B2 APT26F120L 1200V, 27A, 0.58 Max, trr 335nsN-Channel FREDFET T-MaxTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt

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