APT28M120L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: APT28M120L
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1135 W
Предельно допустимое напряжение сток-исток |Uds|: 1200 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 29 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 300 nC
Время нарастания (tr): 31 ns
Выходная емкость (Cd): 715 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.53 Ohm
Тип корпуса: TO-264
Аналог (замена) для APT28M120L
APT28M120L Datasheet (PDF)
apt28m120b2 apt28m120l.pdf
APT28M120B2 APT28M120L 1200V, 29A, 0.53 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and
apt28ga60k.pdf
APT28GA60K 600V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved TO-220through leading technology silicon design and lifetime control processes. A reduced Eoff - APT28GA60KVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excelle
apt28ga60bd15.pdf
APT28GA60BD15 600V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT28GA60BD15gate charge and a greatly reduced ratio of Cres/Cies provide excellent
apt28f60b apt28f60s.pdf
APT28F60B APT28F60S 600V, 30A, 0.22 Max, trr 230nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo
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