Справочник MOSFET. APT30M30JFLL

 

APT30M30JFLL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT30M30JFLL
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 520 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 300 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 88 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 140 nC
   trⓘ - Время нарастания: 19 ns
   Cossⓘ - Выходная емкость: 1895 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
   Тип корпуса: SOT-227

 Аналог (замена) для APT30M30JFLL

 

 

APT30M30JFLL Datasheet (PDF)

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 apt30m30jfll.pdf

APT30M30JFLL APT30M30JFLL

APT30M30JFLL300V 88A 0.030R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally fast switching

 5.1. Size:69K  apt
 apt30m30jll.pdf

APT30M30JFLL APT30M30JFLL

APT30M30JLL300V 88A 0.030WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's"

 6.1. Size:154K  apt
 apt30m30b2llg apt30m30lllg.pdf

APT30M30JFLL APT30M30JFLL

APT30M30B2LLAPT30M30LLL300V 100A 0.030RB2LL POWER MOS 7 MOSFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesLLL

 6.2. Size:70K  apt
 apt30m30b2ll.pdf

APT30M30JFLL APT30M30JFLL

APT30M30B2LLAPT30M30LLL300V 100A 0.030WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast

 6.3. Size:160K  apt
 apt30m30b2fllg apt30m30lfll.pdf

APT30M30JFLL APT30M30JFLL

APT30M30B2FLLAPT30M30LFLL300V 100A 0.030R B2FLL POWER MOS 7 FREDFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses

 6.4. Size:376K  inchange semiconductor
 apt30m30b2fll.pdf

APT30M30JFLL APT30M30JFLL

isc N-Channel MOSFET Transistor APT30M30B2FLLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.03(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 6.5. Size:255K  inchange semiconductor
 apt30m30lfll.pdf

APT30M30JFLL APT30M30JFLL

isc N-Channel MOSFET Transistor APT30M30LFLLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.03(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

 6.6. Size:376K  inchange semiconductor
 apt30m30b2ll.pdf

APT30M30JFLL APT30M30JFLL

isc N-Channel MOSFET Transistor APT30M30B2LLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.03(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

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