APT30M30LFLL. Аналоги и основные параметры
Наименование производителя: APT30M30LFLL
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 694 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 300 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 22 ns
Cossⓘ - Выходная емкость: 1895 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
Тип корпуса: TO-264
Аналог (замена) для APT30M30LFLL
- подборⓘ MOSFET транзистора по параметрам
APT30M30LFLL даташит
apt30m30b2fllg apt30m30lfll.pdf
APT30M30B2FLL APT30M30LFLL 300V 100A 0.030 R B2FLL POWER MOS 7 FREDFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses
apt30m30lfll.pdf
isc N-Channel MOSFET Transistor APT30M30LFLL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V =300V(Min) DSS Static Drain-Source On-Resistance R =0.03 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p
apt30m30b2llg apt30m30lllg.pdf
APT30M30B2LL APT30M30LLL 300V 100A 0.030 R B2LL POWER MOS 7 MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses LLL
apt30m30jll.pdf
APT30M30JLL 300V 88A 0.030W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "
Другие IGBT... APT29F80J, APT30F50B, APT30F50S, APT30F60J, APT30M17JFLL, APT30M30B2FLLG, APT30M30B2LLG, APT30M30JFLL, IRF520, APT30M30LLLG, APT30M36JFLL, APT30M40B2VFRG, APT30M40B2VRG, APT30M60J, APT30M61BFLLG, APT30M61SFLLG, APT30M75BFLLG
History: 2SK1377 | QM04N65F1
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