APT30M75BFLLG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: APT30M75BFLLG
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 329 W
Предельно допустимое напряжение сток-исток |Uds|: 300 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 44 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 57 nC
Время нарастания (tr): 3 ns
Выходная емкость (Cd): 771 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.075 Ohm
Тип корпуса: TO-247
Аналог (замена) для APT30M75BFLLG
APT30M75BFLLG Datasheet (PDF)
apt30m75bfllg apt30m75sfllg.pdf
APT30M75BFLLAPT30M75SFLL300V 44A 0.075BFLLR POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSFLL
apt30m75bfll.pdf
isc N-Channel MOSFET Transistor APT30M75BFLLFEATURESDrain Current I = 44A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.075(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
apt30m75bll.pdf
APT30M75BLLAPT30M75SLL300V 44A 0.075WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switchin
apt30m75bllg apt30m75sllg.pdf
APT30M75BLLAPT30M75SLL300V 44A 0.075RBLL POWER MOS 7 MOSFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSLLalo
apt30m75bll.pdf
isc N-Channel MOSFET Transistor APT30M75BLLFEATURESDrain Current I =44A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.075(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
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