RFG50N06, RFP50N06, RF1S50N06SMData Sheet January 200250A, 60V, 0.022 Ohm, N-Channel Power FeaturesMOSFETs 50A, 60VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits gives optimum utilization of silico

RFG50N06LE, RFP50N06LE, RF1S50N06LESMData Sheet October 1999 File Number 4072.350A, 60V, 0.022 Ohm, Logic Level FeaturesN-Channel Power MOSFETs 50A, 60VThese N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.022manufactured using the latest manufacturing process Temperature Compensating PSPICE Modeltechnology. This process, which uses feature sizesapproa

IRF540, RF1S540SMData Sheet January 200228A, 100V, 0.077 Ohm, N-Channel Power FeaturesMOSFETs 28A, 100VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.077power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avala

IRF540, IRF541, IRF542,SemiconductorIRF543, RF1S540, RF1S540SM25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm,N-Channel Power MOSFETsNovember 1997Features Description 25A and 28A, 80V and 100V These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 0.077 and 0.100MOSFETs designed, tested, and guaranteed to

IRF530, RF1S530SMData Sheet November 1999 File Number 1575.614A, 100V, 0.160 Ohm, N-Channel Power FeaturesMOSFETs 14A, 100VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.160power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in th