APT34F100L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: APT34F100L
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1135 W
Предельно допустимое напряжение сток-исток |Uds|: 1000 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 35 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 305 nC
Время нарастания (tr): 40 ns
Выходная емкость (Cd): 825 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.38 Ohm
Тип корпуса: TO-264 TO-264AA
Аналог (замена) для APT34F100L
APT34F100L Datasheet (PDF)
apt34f100b2 apt34f100l.pdf
APT34F100B2 APT34F100L 1000V, 35A, .38 Max trr 300nsN-Channel FREDFET T-MaxTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt ca
apt34f60b apt34f60bg apt34f60s.pdf
APT34F60B APT34F60S 600V, 36A, 0.19 Max trr 250nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power D3PAKMOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low
apt34f60b.pdf
isc N-Channel MOSFET Transistor APT34F60BFEATURESDrain Current I = 34A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.21(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
apt34n80b2c3.pdf
APT34N80B2C3APT34N80LC3800V 34A 0.145Super Junction MOSFETT-MAXTO-264COOLMOSPower Semiconductors Ultra low RDS(ON)D Low Miller Capacitance Ultra Low Gate Charge, QgG Avalanche Energy RatedS Popular T-MAX or TO-264 PackageMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol ParameterAPT34N80B2C3_
apt34m60b apt34m60s.pdf
APT34M60B APT34M60S 600V, 36A, 0.19 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of
apt34n80b2c3g apt34n80lc3g.pdf
APT34N80B2C3APT34N80LC3800V 34A 0.145Super Junction MOSFETT-MAXTO-264COOLMOSPower Semiconductors Ultra low RDS(ON) Low Miller CapacitanceD Ultra Low Gate Charge, Qg Avalanche Energy Rated G Popular T-MAX or TO-264 PackageSUnless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made
apt34m60b.pdf
isc N-Channel MOSFET Transistor APT34M60BFEATURESDrain Current I =36A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.19(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
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