APT34M60S. Аналоги и основные параметры

Наименование производителя: APT34M60S

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 624 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 36 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 43 ns

Cossⓘ - Выходная емкость: 610 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm

Тип корпуса: D3PAK

Аналог (замена) для APT34M60S

- подборⓘ MOSFET транзистора по параметрам

 

APT34M60S даташит

 ..1. Size:212K  microsemi
apt34m60b apt34m60s.pdfpdf_icon

APT34M60S

APT34M60B APT34M60S 600V, 36A, 0.19 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of

 6.1. Size:376K  inchange semiconductor
apt34m60b.pdfpdf_icon

APT34M60S

isc N-Channel MOSFET Transistor APT34M60B FEATURES Drain Current I =36A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.19 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 9.1. Size:173K  apt
apt34n80b2c3.pdfpdf_icon

APT34M60S

APT34N80B2C3 APT34N80LC3 800V 34A 0.145 Super Junction MOSFET T-MAX TO-264 COOLMOS Power Semiconductors Ultra low RDS(ON) D Low Miller Capacitance Ultra Low Gate Charge, Qg G Avalanche Energy Rated S Popular T-MAX or TO-264 Package MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT34N80B2C3_

 9.2. Size:256K  microsemi
apt34n80b2c3g apt34n80lc3g.pdfpdf_icon

APT34M60S

APT34N80B2C3 APT34N80LC3 800V 34A 0.145 Super Junction MOSFET T-MAX TO-264 COOLMOS Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance D Ultra Low Gate Charge, Qg Avalanche Energy Rated G Popular T-MAX or TO-264 Package S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made

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