APT34N80B2C3G - описание и поиск аналогов

 ..1. Size:256K  microsemi
 apt34n80b2c3g apt34n80lc3g.pdf 

APT34N80B2C3 APT34N80LC3 800V 34A 0.145 Super Junction MOSFET T-MAX TO-264 COOLMOS Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance D Ultra Low Gate Charge, Qg Avalanche Energy Rated G Popular T-MAX or TO-264 Package S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made

 2.1. Size:173K  apt
 apt34n80b2c3.pdf 

APT34N80B2C3 APT34N80LC3 800V 34A 0.145 Super Junction MOSFET T-MAX TO-264 COOLMOS Power Semiconductors Ultra low RDS(ON) D Low Miller Capacitance Ultra Low Gate Charge, Qg G Avalanche Energy Rated S Popular T-MAX or TO-264 Package MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT34N80B2C3_

 9.1. Size:212K  microsemi
 apt34m60b apt34m60s.pdf 

APT34M60B APT34M60S 600V, 36A, 0.19 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of

 9.2. Size:213K  microsemi
 apt34f60b apt34f60bg apt34f60s.pdf 

APT34F60B APT34F60S 600V, 36A, 0.19 Max trr 250ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power D3PAK MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low

 9.3. Size:179K  microsemi
 apt34f100b2 apt34f100l.pdf 

APT34F100B2 APT34F100L 1000V, 35A, .38 Max trr 300ns N-Channel FREDFET T-Max TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt ca

 9.4. Size:375K  inchange semiconductor
 apt34f60b.pdf 

isc N-Channel MOSFET Transistor APT34F60B FEATURES Drain Current I = 34A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.21 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.5. Size:376K  inchange semiconductor
 apt34m60b.pdf 

isc N-Channel MOSFET Transistor APT34M60B FEATURES Drain Current I =36A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.19 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos