Справочник MOSFET. APT37F50S

 

APT37F50S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT37F50S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 520 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 37 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 29 ns
   Cossⓘ - Выходная емкость: 615 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.15 Ohm
   Тип корпуса: D3PAK

 Аналог (замена) для APT37F50S

 

 

APT37F50S Datasheet (PDF)

 ..1. Size:214K  microsemi
 apt37f50b apt37f50s.pdf

APT37F50S APT37F50S

APT37F50B APT37F50S 500V, 37A, 0.15 Max, trr, 250nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. L

 6.1. Size:375K  inchange semiconductor
 apt37f50b.pdf

APT37F50S APT37F50S

isc N-Channel MOSFET Transistor APT37F50BFEATURESDrain Current I = 37A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 9.1. Size:210K  microsemi
 apt37m100b2 apt37m100l.pdf

APT37F50S APT37F50S

APT37M100B2 APT37M100L 1000V, 37A, 0.33 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and

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