APT37F50S. Аналоги и основные параметры

Наименование производителя: APT37F50S

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 520 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 37 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 29 ns

Cossⓘ - Выходная емкость: 615 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.15 Ohm

Тип корпуса: D3PAK

Аналог (замена) для APT37F50S

- подборⓘ MOSFET транзистора по параметрам

 

APT37F50S даташит

 ..1. Size:214K  microsemi
 apt37f50b apt37f50s.pdf pdf_icon

APT37F50S

APT37F50B APT37F50S 500V, 37A, 0.15 Max, trr, 250ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. L

 6.1. Size:375K  inchange semiconductor
 apt37f50b.pdf pdf_icon

APT37F50S

isc N-Channel MOSFET Transistor APT37F50B FEATURES Drain Current I = 37A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.1. Size:210K  microsemi
 apt37m100b2 apt37m100l.pdf pdf_icon

APT37F50S

APT37M100B2 APT37M100L 1000V, 37A, 0.33 Max N-Channel MOSFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and

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