APT38F50J Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT38F50J
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 355 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 38 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 45 ns
Cossⓘ - Выходная емкость: 945 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
Тип корпуса: SOT-227
Аналог (замена) для APT38F50J
APT38F50J Datasheet (PDF)
apt38f50j.pdf

APT38F50J 500V, 38A, 0.10 Max, trr 280nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high
apt38f80b2 apt38f80l.pdf

APT38F80B2 APT38F80L 800V, 41A, 0.24 Max, trr 300nsN-Channel FREDFET T-MaxTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt cap
apt38n60bc6 apt38n60sc6.pdf

APT38N60BC6 APT38N60SC6 600V 38A 0.099 COOLMOSPower Semiconductors Super Junction MOSFET Ultra Low RDS(ON) D3PAK Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt RatedD Popular TO-247 or Surface Mount D3 package.GSMAXIMUM RATINGS All Ratings per die: TC = 25C unless otherwise specified. Symbol Parame
apt38m50j.pdf

APT38M50J 500V, 38A, 0.10 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon ga
Другие MOSFET... APT34N80LC3G , APT3565BN , APT3580BN , APT36N90BC3G , APT37F50B , APT37F50S , APT37M100B2 , APT37M100L , IRFP460 , APT38F80B2 , APT38F80L , APT38M50J , APT38N60BC6 , APT38N60SC6 , APT39F60J , APT39M60J , APT4012BVFRG .
History: IXFH21N50F | SUP18N15-95 | SDF10N60
History: IXFH21N50F | SUP18N15-95 | SDF10N60



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