APT38M50J. Аналоги и основные параметры
Наименование производителя: APT38M50J
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 357 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 38 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 45 ns
Cossⓘ - Выходная емкость: 945 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
Тип корпуса: SOT-227
Аналог (замена) для APT38M50J
- подборⓘ MOSFET транзистора по параметрам
APT38M50J даташит
apt38m50j.pdf
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apt38n60bc6 apt38n60sc6.pdf
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apt38f80b2 apt38f80l.pdf
APT38F80B2 APT38F80L 800V, 41A, 0.24 Max, trr 300ns N-Channel FREDFET T-Max TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt cap
apt38f50j.pdf
APT38F50J 500V, 38A, 0.10 Max, trr 280ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high
Другие IGBT... APT36N90BC3G, APT37F50B, APT37F50S, APT37M100B2, APT37M100L, APT38F50J, APT38F80B2, APT38F80L, IRFB4110, APT38N60BC6, APT38N60SC6, APT39F60J, APT39M60J, APT4012BVFRG, APT4012SVFRG, APT4014BVFRG, APT4014SVFRG
History: APT4065BN
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