Справочник MOSFET. APT40M35JVFR

 

APT40M35JVFR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT40M35JVFR
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 700 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 93 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 710 nC
   trⓘ - Время нарастания: 30 ns
   Cossⓘ - Выходная емкость: 2400 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm
   Тип корпуса: SOT-227

 Аналог (замена) для APT40M35JVFR

 

 

APT40M35JVFR Datasheet (PDF)

 ..1. Size:116K  microsemi
 apt40m35jvfr.pdf

APT40M35JVFR APT40M35JVFR

APT40M35JVFR400V 93A 0.035 POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V"UL Recognized"also achieves faster switching speeds through optimized gate layout.ISOTOP Faster

 4.1. Size:72K  apt
 apt40m35jvr.pdf

APT40M35JVFR APT40M35JVFR

APT40M35JVR400V 93A 0.035POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

 6.1. Size:36K  apt
 apt40m35pvr.pdf

APT40M35JVFR APT40M35JVFR

APT40M35PVR400V 89A 0.035POWER MOS VP-PackPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V alsoachieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 8.1. Size:59K  apt
 apt40m42jn.pdf

APT40M35JVFR APT40M35JVFR

DGAPT40M42JN 400V 86A 0.042S"UL Recognized" File No. E145592 (S)ISOTOPPOWER MOS IVSINGLE DIE ISOTOP PACKAGEN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APTSymbol Parameter 40M42JN UNITVDSS Drain-Source Voltage400 VoltsID Continuous Drain Current @ TC = 25C86AmpsIDM, lLM Pulse

 8.2. Size:62K  apt
 apt40m70lvr.pdf

APT40M35JVFR APT40M35JVFR

APT40M70LVR400V 57A 0.070POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Lowe

 8.3. Size:69K  apt
 apt40m70jvr.pdf

APT40M35JVFR APT40M35JVFR

APT40M70JVR400V 53A 0.070POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

 8.4. Size:62K  apt
 apt40m75jn.pdf

APT40M35JVFR APT40M35JVFR

DGAPT40M75JN 400V 56.0A 0.075SAPT40M90JN 400V 51.0A 0.090ISOTOP"UL Recognized" File No. E145592 (S)POWER MOS IVSINGLE DIE ISOTOP PACKAGEN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 40M75JN 40M90JN UNITVDSS Drain-Source Voltage400 400 VoltsID Continuous Dr

 8.5. Size:60K  apt
 apt40m82wvr.pdf

APT40M35JVFR APT40M35JVFR

APT40M82WVR400V 44A 0.082POWER MOS VTO-267Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 8.6. Size:70K  apt
 apt40m70jvfr.pdf

APT40M35JVFR APT40M35JVFR

APT40M70JVFR400V 53A 0.070 POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V"UL Recognized"also achieves faster switching speeds through optimized gate layout.ISOTOP Faster

 8.7. Size:148K  apt
 apt40m70b2vfrg apt40m70lvfrg.pdf

APT40M35JVFR APT40M35JVFR

400V 57A 0.070APT40M70B2VFR APT40M70LVFRAPT40M70B2VFRG* APT40M40LVFRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.B2VFR POWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance

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