APT5018BFLLG. Аналоги и основные параметры
Наименование производителя: APT5018BFLLG
Тип транзистора: MOFETS
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 27 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 4 ns
Cossⓘ - Выходная емкость: 546 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
Тип корпуса: TO-247
Аналог (замена) для APT5018BFLLG
- подборⓘ MOSFET транзистора по параметрам
APT5018BFLLG даташит
apt5018bfllg apt5018sfllg.pdf
APT5018BFLL APT5018SFLL 500V 27A 0.180 BLL R POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SLL al
apt5018bfll.pdf
APT5018BFLL APT5018SFLL 500V 27A 0.180W TM BLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast
apt5018bfll.pdf
isc N-Channel MOSFET Transistor APT5018BFLL FEATURES Drain Current I =27A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.18 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
apt5018bll.pdf
APT5018BLL APT5018SLL 500V 27A 0.180W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching
Другие MOSFET... 2SK125 , 2SJ410 , 2SK2518-01MR , 2SK4027 , APT5016BFLLG , APT5016BLLG , APT5016SFLLG , APT5017SVFRG , 7N60 , APT5018SFLLG , APT5018SLL , APT5022BN , APT5024BLL , APT5024BLLG , APT5024SFLL , APT5024SFLLG , APT5024SLL .
History: RTR025N03 | 2SK2887 | SWD065R68E7T
History: RTR025N03 | 2SK2887 | SWD065R68E7T
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