APT5018BFLLG Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT5018BFLLG
Тип транзистора: MOFETS
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 27 A
Tj ⓘ - Максимальная температура канала: 150 °C
Qg ⓘ - Общий заряд затвора: 58 nC
tr ⓘ - Время нарастания: 4 ns
Cossⓘ - Выходная емкость: 546 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
Тип корпуса: TO-247
Аналог (замена) для APT5018BFLLG
APT5018BFLLG Datasheet (PDF)
apt5018bfllg apt5018sfllg.pdf

APT5018BFLLAPT5018SFLL500V 27A 0.180BLLR POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSLLal
apt5018bfll.pdf

APT5018BFLLAPT5018SFLL500V 27A 0.180WTM BLLFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast
apt5018bfll.pdf

isc N-Channel MOSFET Transistor APT5018BFLLFEATURESDrain Current I =27A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.18(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
apt5018bll.pdf

APT5018BLLAPT5018SLL500V 27A 0.180WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching
Другие MOSFET... 2SK125 , 2SJ410 , 2SK2518-01MR , 2SK4027 , APT5016BFLLG , APT5016BLLG , APT5016SFLLG , APT5017SVFRG , MMIS60R580P , APT5018SFLLG , APT5018SLL , APT5022BN , APT5024BLL , APT5024BLLG , APT5024SFLL , APT5024SFLLG , APT5024SLL .
History: AFN501DEA | HGN035N08A | SSM3K37MFV | CJK3407 | HGD093N12SL
History: AFN501DEA | HGN035N08A | SSM3K37MFV | CJK3407 | HGD093N12SL



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