APT5024SLL Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT5024SLL
Тип транзистора: MOFETS
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 265 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 22 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 417 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.24 Ohm
Тип корпуса: D3PAK
- подбор MOSFET транзистора по параметрам
APT5024SLL Datasheet (PDF)
apt5024bll apt5024sll.pdf

APT5024BLLAPT5024SLL500V 22A 0.240RBLL POWER MOS 7 MOSFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSLLalong
apt5024svr.pdf

APT5024SVR500V 22A 0.240POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementD3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche TestedD Lower Leak
apt5024svfrg.pdf

APT5024BVFRAPT5024SVFR500V 22A 0.240BVFRFREDFETPOWER MOS VD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS VSVFRalso achieves faster switching speeds through optimized gate layout.
apt5024sfll apt5024sfllg.pdf

APT5024BFLL APT5024SFLL 500V 22A 0.240BFLLR POWER MOS 7 FREDFET (B)Power MOS 7 is a new generation of low loss, high voltage, N-ChannelD3PAKenhancement mode power MOSFETS. Both conduction and switch-(S)ing losses are addressed with Power MOS 7 by significantly lowering CG ERDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along wi
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: STB12NM60N-1 | R6535KNZ1 | IXTH140P10T | VSE002N03MS-G | AP03N70J-H-HF | SUB85N03-07P | 2SK3430-ZJ
History: STB12NM60N-1 | R6535KNZ1 | IXTH140P10T | VSE002N03MS-G | AP03N70J-H-HF | SUB85N03-07P | 2SK3430-ZJ



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