Справочник MOSFET. APT50M50JLL

 

APT50M50JLL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT50M50JLL
   Тип транзистора: MOFETS
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 595 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 71 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 200 nC
   trⓘ - Время нарастания: 22 ns
   Cossⓘ - Выходная емкость: 2061 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm
   Тип корпуса: SOT-227

 Аналог (замена) для APT50M50JLL

 

 

APT50M50JLL Datasheet (PDF)

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 apt50m50jll.pdf

APT50M50JLL APT50M50JLL

APT50M50JLL500V 71A 0.050R POWER MOS 7 MOSFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses"UL Recognized"along with exceptionally

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 apt50m50jlc.pdf

APT50M50JLL APT50M50JLL

APT50M50JLC500V 77A 0.050 WTMPOWER MOS VIPower MOS VITM is a new generation of low gate charge, high voltageN-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,"UL Recognized"delivers exceptionally fast switching speeds.ISOT

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 apt50m50jvfr.pdf

APT50M50JLL APT50M50JLL

APT50M50JVFR500V 77A 0.050POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode

 5.2. Size:71K  apt
 apt50m50jfll.pdf

APT50M50JLL APT50M50JLL

APT50M50JFLL500V 71A 0.050WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent wit

 5.3. Size:71K  apt
 apt50m50jvr.pdf

APT50M50JLL APT50M50JLL

APT50M50JVR500V 77A 0.050POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

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