APT50M50L2FLLG datasheet, аналоги, основные параметры
Наименование производителя: APT50M50L2FLLG 📄📄
Тип транзистора: MOFETS
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 893 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 89 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 22 ns
Cossⓘ - Выходная емкость: 2060 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm
Тип корпуса: TO-264MAX
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Аналог (замена) для APT50M50L2FLLG
- подборⓘ MOSFET транзистора по параметрам
APT50M50L2FLLG даташит
apt50m50l2fllg.pdf
APT50M50L2FLL 500V 89A 0.050 R POWER MOS 7 FREDFET TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally
apt50m50l2fll.pdf
APT50M50L2FLL 500V 89A 0.050W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds
apt50m50l2llg.pdf
APT50M50L2LL 500V 89A 0.050 R POWER MOS 7 MOSFET TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fa
apt50m50l2ll.pdf
APT50M50L2LL 500V 87A 0.050W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent
Другие IGBT... APT5024SFLLG, APT5024SLL, APT5024SVFRG, APT5025AN, APT5030AN, APT5030BN, APT5040KFLLG, APT50M50JLL, AON6426, APT50M50L2LLG, APT50M60JVFR, APT50M60JVR, APT50M60L2VFRG, APT50M60L2VRG, APT50M65B2LLG, APT50M65LFLL, APT50M65LLLG
Параметры MOSFET. Взаимосвязь и компромиссы
History: SSU65R420S2 | IXFH74N20P | AGM206A | SST65R1K2S2E
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