APT50M50L2FLLG Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT50M50L2FLLG
Тип транзистора: MOFETS
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 893 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 89 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 22 ns
Cossⓘ - Выходная емкость: 2060 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm
Тип корпуса: TO-264MAX
- подбор MOSFET транзистора по параметрам
APT50M50L2FLLG Datasheet (PDF)
apt50m50l2fllg.pdf

APT50M50L2FLL500V 89A 0.050R POWER MOS 7 FREDFETTO-264Power MOS 7 is a new generation of low loss, high voltage, N-ChannelMaxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally
apt50m50l2fll.pdf

APT50M50L2FLL500V 89A 0.050WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds
apt50m50l2llg.pdf

APT50M50L2LL500V 89A 0.050R POWER MOS 7 MOSFETTO-264Power MOS 7 is a new generation of low loss, high voltage, N-ChannelMaxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally fa
apt50m50l2ll.pdf

APT50M50L2LL500V 87A 0.050WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IRFR3708 | BUK455-100B | NCEAP016N10LL | FDG6320C | SI7413DN | STB10NK60ZT4 | SSF65R420S2
History: IRFR3708 | BUK455-100B | NCEAP016N10LL | FDG6320C | SI7413DN | STB10NK60ZT4 | SSF65R420S2



Список транзисторов
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