Справочник MOSFET. APT50M80LVFRG

 

APT50M80LVFRG Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: APT50M80LVFRG
   Тип транзистора: MOFETS
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 625 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 58 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 25 ns
   Cossⓘ - Выходная емкость: 1286 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: TO-264
 

 Аналог (замена) для APT50M80LVFRG

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APT50M80LVFRG Datasheet (PDF)

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APT50M80LVFRG

APT50M80B2VFRAPT50M80LVFR500V 58A 0.080POWER MOS V FREDFETTMT-MaxPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 2.1. Size:255K  inchange semiconductor
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APT50M80LVFRG

isc N-Channel MOSFET Transistor APT50M80LVFRFEATURESDrain Current I = 58A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.08(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

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APT50M80LVFRG

APT50M80B2VRAPT50M80LVR500V 58A 0.080POWER MOS VTMT-MaxPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Identical

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APT50M80LVFRG

APT50M80B2VFR500V 58A 0.080WPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche T

Другие MOSFET... APT50M65LFLL , APT50M65LLLG , APT50M75B2FLLG , APT50M75B2LLG , APT50M75LFLLG , APT50M75LLLG , APT50M80B2VFRG , APT50M80B2VRG , IRFP260N , APT50M80LVRG , APT50M85B2VFRG , APT50M85LVFRG , APT50M85LVR , APT50N60JCCU2 , APT51F50J , APT51M50J , APT53F80J .

History: AFP2309 | HGW190N15S | AP4409GEP-HF | OSG60R320FT3ZF | BSC150N03LD | BRCS010N04SZC | 2SK4067I

 

 
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