Справочник MOSFET. APT6010B2FLLG

 

APT6010B2FLLG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT6010B2FLLG
   Тип транзистора: MOFETS
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 690 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 54 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 150 nC
   trⓘ - Время нарастания: 19 ns
   Cossⓘ - Выходная емкость: 1250 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: TO-247

 Аналог (замена) для APT6010B2FLLG

 

 

APT6010B2FLLG Datasheet (PDF)

 ..1. Size:259K  microsemi
 apt6010b2fllg apt6010lfllg.pdf

APT6010B2FLLG APT6010B2FLLG

600V 54A 0.100APT6010B2FLL APT6010LFLLAPT6010B2FLL* APT6010LFLLG**G Denotes RoHS Compliant, Pb Free Terminal Finish.R B2FLL POWER MOS 7 FREDFETT-MAXTO-264Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering

 2.1. Size:376K  inchange semiconductor
 apt6010b2fll.pdf

APT6010B2FLLG APT6010B2FLLG

isc N-Channel MOSFET Transistor APT6010B2FLLFEATURESDrain Current I = 54A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 5.1. Size:69K  apt
 apt6010b2ll.pdf

APT6010B2FLLG APT6010B2FLLG

APT6010B2LLAPT6010LLL600V 54A 0.100WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast swi

 5.2. Size:258K  microsemi
 apt6010b2llg apt6010lllg.pdf

APT6010B2FLLG APT6010B2FLLG

600V 54A 0.100APT6010B2LL APT6010LLLAPT6010B2LL* APT6010LLLG**G Denotes RoHS Compliant, Pb Free Terminal Finish.RB2LL POWER MOS 7 MOSFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(O

 5.3. Size:376K  inchange semiconductor
 apt6010b2ll.pdf

APT6010B2FLLG APT6010B2FLLG

isc N-Channel MOSFET Transistor APT6010B2LLFEATURESDrain Current I = 54A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top