Справочник MOSFET. APT6011B2VFRG

 

APT6011B2VFRG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT6011B2VFRG
   Тип транзистора: MOFETS
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 625 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 49 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 450 nC
   trⓘ - Время нарастания: 16 ns
   Cossⓘ - Выходная емкость: 1100 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
   Тип корпуса: TO-247

 Аналог (замена) для APT6011B2VFRG

 

 

APT6011B2VFRG Datasheet (PDF)

 ..1. Size:147K  apt
 apt6011b2vfrg apt6011lvfrg.pdf

APT6011B2VFRG APT6011B2VFRG

APT6011B2VFRAPT6011LVFR600V 49A 0.110B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 2.1. Size:33K  apt
 apt6011b2vfr.pdf

APT6011B2VFRG APT6011B2VFRG

APT6011B2VFR600V 49A 0.110WPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Te

 4.1. Size:143K  apt
 apt6011b2vr.pdf

APT6011B2VFRG APT6011B2VFRG

APT6011B2VRAPT6011LVR600V 49A 0.110B2VR POWER MOS V MOSFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR

 7.1. Size:37K  apt
 apt6011lvr.pdf

APT6011B2VFRG APT6011B2VFRG

APT6011B2VRAPT6011LVR600V 49A 0.110WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specifications

 7.2. Size:33K  apt
 apt6011lvfr.pdf

APT6011B2VFRG APT6011B2VFRG

APT6011LVFR600V 49A 0.110WPOWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Teste

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top