APT6013B2LLG datasheet, подбор замены

 ..1. Size:200K  apt
 apt6013b2llg apt6013lllg.pdf 

APT6013B2LL APT6013LLL 600V 43A 0.130 B2LL R POWER MOS 7 MOSFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses LLL

 3.1. Size:69K  apt
 apt6013b2ll.pdf 

APT6013B2LL APT6013LLL 600V 43A 0.130W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast swi

 3.2. Size:376K  inchange semiconductor
 apt6013b2ll.pdf 

isc N-Channel MOSFET Transistor APT6013B2LL FEATURES Drain Current I = 43A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.13 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 5.1. Size:70K  apt
 apt6013b2fll.pdf 

APT6013B2FLL APT6013LFLL 600V 43A 0.130W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona

 5.2. Size:142K  apt
 apt6013b2fllg apt6013lfllg.pdf 

APT6013B2FLL APT6013LFLL 600V 43A 0.130 B2FLL R POWER MOS 7 FREDFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses L

 5.3. Size:376K  inchange semiconductor
 apt6013b2fll.pdf 

isc N-Channel MOSFET Transistor APT6013B2FLL FEATURES Drain Current I = 43A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.13 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu