APT6017B2FLLG - Аналоги. Основные параметры
Наименование производителя: APT6017B2FLLG
Тип транзистора: MOFETS
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 500 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 35 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 7 ns
Cossⓘ - Выходная емкость: 830 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.17 Ohm
Тип корпуса: TO-247
Аналог (замена) для APT6017B2FLLG
APT6017B2FLLG технические параметры
apt6017b2fllg apt6017lfllg.pdf
APT6017B2FLL APT6017LFLL 600V 35A 0.170 B2FLL R POWER MOS 7 FREDFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses L
apt6017b2fll.pdf
APT6017B2FLL APT6017LFLL 600V 35A 0.017W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona
apt6017b2fll.pdf
isc N-Channel MOSFET Transistor APT6017B2FLL FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.17 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu
apt6017b2ll.pdf
APT6017B2LL APT6017LLL 600V 35A 0.170W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast swi
Другие MOSFET... APT6011LVFRG , APT6013B2FLLG , APT6013B2LLG , APT6013LFLLG , APT6013LLLG , APT6015B2VFRG , APT6015JVFR , APT6015LVFRG , CS150N03A8 , APT6017B2LLG , APT6017LFLLG , APT6017LLLG , APT6018JN , APT6021BFLLG , APT6021BLLG , APT6021SFLLG , APT6025BFLLG .
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