APT6021BLLG datasheet, аналоги, основные параметры
Наименование производителя: APT6021BLLG 📄📄
Тип транзистора: MOFETS
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 400 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 29 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 7 ns
Cossⓘ - Выходная емкость: 635 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.21 Ohm
Тип корпуса: TO-247
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Аналог (замена) для APT6021BLLG
- подборⓘ MOSFET транзистора по параметрам
APT6021BLLG даташит
apt6021bllg.pdf
APT6021BLL APT6021SLL 600V 29A 0.210 R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SLL along
apt6021bll.pdf
APT6021BLL APT6021SLL 600V 29A 0.210W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching
apt6021bll.pdf
isc N-Channel MOSFET Transistor APT6021BLL FEATURES Drain Current I =29A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.21 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
apt6021bfllg apt6021sfllg.pdf
APT6021BFLL APT6021SFLL 600V 29A 0.210 R BFLL POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SFLL
Другие IGBT... APT6015JVFR, APT6015LVFRG, APT6017B2FLLG, APT6017B2LLG, APT6017LFLLG, APT6017LLLG, APT6018JN, APT6021BFLLG, 5N60, APT6021SFLLG, APT6025BFLLG, APT6025BLLG, APT6025BVFRG, APT6025BVRG, APT6025SFLLG, APT6025SVFRG, APT6029BFLLG
Параметры MOSFET. Взаимосвязь и компромиссы
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