APT6029BFLLG - Аналоги. Основные параметры
Наименование производителя: APT6029BFLLG
Тип транзистора: MOFETS
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 21 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 420 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.29 Ohm
Тип корпуса: TO-247
Аналог (замена) для APT6029BFLLG
APT6029BFLLG технические параметры
apt6029bfllg apt6029sfllg.pdf
APT6029BFLL APT6029SFLL 600V 21A 0.290 BFLL R POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SFLL
apt6029bfll.pdf
APT6029BFLL APT6029SFLL 600V 21A 0.290W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas
apt6029bfll.pdf
isc N-Channel MOSFET Transistor APT6029BFLL FEATURES Drain Current I =21A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.29 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
apt6029bll.pdf
APT6029BLL APT6029SLL 600V 21A 0.290W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching
Другие MOSFET... APT6021BLLG , APT6021SFLLG , APT6025BFLLG , APT6025BLLG , APT6025BVFRG , APT6025BVRG , APT6025SFLLG , APT6025SVFRG , RFP50N06 , APT6029SFLLG , APT6029SLL , APT6029SLLG , APT6033BN , APT6035BVFRG , APT6035SVFRG , APT6038BFLLG , APT6038BLLG .
History: R6004JNJ
History: R6004JNJ
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