APT6029SLLG datasheet, аналоги, основные параметры
Наименование производителя: APT6029SLLG 📄📄
Тип транзистора: MOFETS
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 21 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 420 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.29 Ohm
Тип корпуса: D3PAK
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Аналог (замена) для APT6029SLLG
- подборⓘ MOSFET транзистора по параметрам
APT6029SLLG даташит
apt6029sll apt6029sllg.pdf
APT6029BLL APT6029SLL 600V 21A 0.290 R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SLL along
apt6029bfllg apt6029sfllg.pdf
APT6029BFLL APT6029SFLL 600V 21A 0.290 BFLL R POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SFLL
apt6029bfll.pdf
APT6029BFLL APT6029SFLL 600V 21A 0.290W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas
apt6029bll.pdf
APT6029BLL APT6029SLL 600V 21A 0.290W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching
Другие IGBT... APT6025BLLG, APT6025BVFRG, APT6025BVRG, APT6025SFLLG, APT6025SVFRG, APT6029BFLLG, APT6029SFLLG, APT6029SLL, STP65NF06, APT6033BN, APT6035BVFRG, APT6035SVFRG, APT6038BFLLG, APT6038BLLG, APT6038SFLLG, APT6038SLLG, APT6040SVFR
Параметры MOSFET. Взаимосвязь и компромиссы
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