APT60M75JVFR datasheet, аналоги, основные параметры
Наименование производителя: APT60M75JVFR 📄📄
Тип транзистора: MOFETS
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 700 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 62 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 1900 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm
Тип корпуса: SOT-227
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Аналог (замена) для APT60M75JVFR
- подборⓘ MOSFET транзистора по параметрам
APT60M75JVFR даташит
apt60m75jvfr.pdf
APT60M75JVFR 600V 62A 0.075 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V "UL Recognized" also achieves faster switching speeds through optimized gate layout. ISOTOP Faster
apt60m75jvr.pdf
APT60M75JVR 600V 62A 0.075 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP D Faster Switching 100% Avalanc
apt60m75jfll.pdf
APT60M75JFLL 600V 58A 0.075W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wit
apt60m75jll.pdf
APT60M75JLL 600V 58A 0.075W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "
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Параметры MOSFET. Взаимосвязь и компромиссы
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