APT60M75L2LLG Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT60M75L2LLG
Тип транзистора: MOFETS
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 893 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 73 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 195 nC
trⓘ - Время нарастания: 19 ns
Cossⓘ - Выходная емкость: 1130 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm
Тип корпуса: TO-264MAX
APT60M75L2LLG Datasheet (PDF)
apt60m75l2llg.pdf

APT60M75L2LL600V 73A 0.075R POWER MOS 7 MOSFETTO-264MaxPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally fa
apt60m75l2ll.pdf

APT60M75L2LL600V 73A 0.075WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent
apt60m75l2fllg.pdf

APT60M75L2FLL600V 73A 0.075R POWER MOS 7 FREDFETTO-264Power MOS 7 is a new generation of low loss, high voltage, N-ChannelMaxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally
apt60m75l2fll.pdf

APT60M75L2FLL600V 73A 0.075WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: STS8816
History: STS8816



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