APT60M75L2LLG datasheet, аналоги, основные параметры
Наименование производителя: APT60M75L2LLG 📄📄
Тип транзистора: MOFETS
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 893 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 73 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 19 ns
Cossⓘ - Выходная емкость: 1130 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm
Тип корпуса: TO-264MAX
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Аналог (замена) для APT60M75L2LLG
- подборⓘ MOSFET транзистора по параметрам
APT60M75L2LLG даташит
apt60m75l2llg.pdf
APT60M75L2LL 600V 73A 0.075 R POWER MOS 7 MOSFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fa
apt60m75l2ll.pdf
APT60M75L2LL 600V 73A 0.075W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent
apt60m75l2fllg.pdf
APT60M75L2FLL 600V 73A 0.075 R POWER MOS 7 FREDFET TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally
apt60m75l2fll.pdf
APT60M75L2FLL 600V 73A 0.075W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds
Другие IGBT... APT6040SVR, APT6045BN, APT6045BVFRG, APT6045SVFRG, APT6060AN, APT6070AN, APT60M75JVFR, APT60M75L2FLLG, FTP08N06A, APT60M80L2VFRG, APT60M80L2VRG, APT60N60BCSG, APT60N90JC3, APT66F60B2, APT66F60L, APT66M60B2, APT66M60L
Параметры MOSFET. Взаимосвязь и компромиссы
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