APT60M80L2VRG Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT60M80L2VRG
Тип транзистора: MOFETS
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 833 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 65 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 24 ns
Cossⓘ - Выходная емкость: 1610 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
Тип корпуса: TO-264MAX
- подбор MOSFET транзистора по параметрам
APT60M80L2VRG Datasheet (PDF)
apt60m80l2vrg.pdf

APT60M80L2VR600V 65A 0.080 POWER MOS V MOSFETL2VRTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Pack
apt60m80l2vr.pdf

APT60M80L2VR600V 65A 0.080WPOWER MOS VTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Package 100% Avalanche TestedD
apt60m80l2vfrg.pdf

APT60M80L2VFR600V 65A 0.080 POWER MOS V FREDFETL2VFRTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX P
apt60m80jvr.pdf

APT60M80JVR600V 55A 0.080POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Popular SOT-227
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IRF630N | PMDPB28UN | 2SK610 | 2SK2525-01 | 2SK3479-Z | AP55T10GH-HF | RQK0603CGDQA
History: IRF630N | PMDPB28UN | 2SK610 | 2SK2525-01 | 2SK3479-Z | AP55T10GH-HF | RQK0603CGDQA



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
2sc1318 datasheet | 2sc3281 datasheet | 2sa1106 | 2sb56 | 2sc1451 datasheet | 2sc373 | a1023 datasheet | 2sc1080