APT60M80L2VRG Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT60M80L2VRG
Тип транзистора: MOFETS
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 833 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 65 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 24 ns
Cossⓘ - Выходная емкость: 1610 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
Тип корпуса: TO-264MAX
Аналог (замена) для APT60M80L2VRG
APT60M80L2VRG Datasheet (PDF)
apt60m80l2vrg.pdf

APT60M80L2VR600V 65A 0.080 POWER MOS V MOSFETL2VRTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Pack
apt60m80l2vr.pdf

APT60M80L2VR600V 65A 0.080WPOWER MOS VTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Package 100% Avalanche TestedD
apt60m80l2vfrg.pdf

APT60M80L2VFR600V 65A 0.080 POWER MOS V FREDFETL2VFRTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX P
apt60m80jvr.pdf

APT60M80JVR600V 55A 0.080POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Popular SOT-227
Другие MOSFET... APT6045BVFRG , APT6045SVFRG , APT6060AN , APT6070AN , APT60M75JVFR , APT60M75L2FLLG , APT60M75L2LLG , APT60M80L2VFRG , AON7403 , APT60N60BCSG , APT60N90JC3 , APT66F60B2 , APT66F60L , APT66M60B2 , APT66M60L , APT6M100K , APT7575AN .
History: PJA3405 | BUK7E2R7-30B | PJA3404 | FG654301 | CS6N80FA9 | STW32N65M5 | TSP4N60M
History: PJA3405 | BUK7E2R7-30B | PJA3404 | FG654301 | CS6N80FA9 | STW32N65M5 | TSP4N60M



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